Self-assembling crystalline peptide microrod for neuromorphic function implementation

نویسندگان

چکیده

•Memristor exhibits repeatable switching behavior and flexible relaxation process•Ion transport confinement was observed via in situ electrostatic force microscopy•Memristor emulates common nociceptive behaviors neuropathic pain Resistive memory technologies have gained significant attention due to their potential for creating bio-inspired intelligent systems that memorize learn locally. However, a major bottleneck of memristors lies the reliability issue uncontrollable filament dynamic induced by inherent stochastic nature ion migration, hindering applications neuromorphic computing. Here we introduce convenient approach which, planar structured cell, solution-processable diphenylalanine microrod (good ionic permeability) is used as medium facilitate quasi-one-dimensional channel Ag diffusion. The volatile feature, highly behavior, process our peptide-based memristor render it promising candidate perform function implementation. For example, tuning external electrical stimuli, device can emulate damaged tissue. Memristive devices offer desirable voltage-regulated conductance promise address zettabyte storage challenges big-data era. Generally, most these reported use amorphous solids, where structural compositional inhomogeneity regarded origin variability. Self-assembling peptide crystals with solution-processed fabrication, controllable morphologies, stability are therefore issues. report diffusive possesses reliable characteristics based on crystallized material: (FF) (MR). This element offers preferential migration path, confining conductive filaments defined crystalline surface reducing programming stochasticity. Ion along FF MR microscopy technique. Additionally, high uniformity reproducible provides an ideal hardware platform nociceptor emulation identification four-bit decimal numbers. development artificial intelligence (AI) analytics driving revolution methods data processing storage. 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Ed. 2013; 52: 2055-2059Crossref (66) Hence, article, formation/rupture short-peptide self-assembling structure (FF MR), Ag/FF MR/Ag shows voltage temporal variation (σ/μ) lower than 0.09, uniform cell-to-cell (five cells constructed short-term features compared Ag/evaporated film/Ag Ag/SiO2/Ag. low activation thus promotes formation. effect directly microscopy, sensitive sufficiently resolution. memristor, nonvolatile be achieved simply adjusting electrode spacing, discovered basic (2-μm spacing) dynamics. Furthermore, nociceptor's numbers (0–15) been demonstrated virtue characteristic. bioresorbable ultrafast dissolution (within 100 s) upon relative humidity, implying suitability further degradable systems. MRs were realized bottom-up finely optimizing ratio concentration 1,1,1,3,3,3-hexafluoro-2-propanol (HFP)/deuteroxide (D2O) (Figure 1A, see experimental procedures), according previously developed methods.37Li Dai Controlled rod nanostructured assembly optical waveguide properties.ACS Nano. 2015; 2689-2695Crossref (158) obtained smooth diameters ∼200–1,000 nm S1). We selected diameter 500–600 mechanical next-stage fabrication. Mechanical damage events during transferring likely happen non-optimal <400 nm, Figure as-synthesized morphology studied scanning electron (SEM) atomic (AFM) depicted Figures 1B 1C. ordered nearly linear shape height 542 408 respectively. X-ray diffraction (XRD) measurement reveals present much better characteristic evaporated thin film 1D).37Li provide good localization event, expected reduce variability corresponding performance.27Milano Then, MR-based bridging (i.e., 5-nm Cr adhesion followed 60-nm electrode; 1, 2, 5 μm) isolated MR, resting SiO2 substrate, schematic diagram circuit (Ag/FF MR/Ag) displayed 1E (see procedures, S2 S3 fabrication details). Cu usually electrochemical accompanied transport.38Waser Dittmann Staikov Szot Redox-based – nanoionic mechanisms, prospects, challenges.Adv. 2009; 21: 2632-2663Crossref (3989) fundamental factor affecting performance. Thus, first evaluated barrier materials. 1F depicts Arrhenius plot conductivity (thermal evaporation)/Ag partially electroformed subthreshold pulse (amplitude, V; width, 8 S4). both increases when temperature 298 K 373 From temperature-dependent plot, Ag+ 0.23 eV 0.30 achieved. material's structure, ion-jumping distance, radius, charge ions. Difference between distinct materials’ distances. value significantly 0.77–1.24 eV),39Pi Ghadiri-Sadrabadi Bardin J.C. Nanoscale radiofrequency switches.Nat. 6: 7519Crossref (79) Scholar,40McBrayer J.D. Swanson R.M. Sigmon T.W. Diffusion metals silicon dioxide.J. Electrochem. 1986; 133: 1242-1246Crossref (488) path. Therefore, built determine if would 1G). To initial current-voltage (I-V) Ag/SiO2/Ag Au/FF MR/Au device, presented 2A–2C (electrode 2 μm). metallization low-conductive functioned dielectric S5). original needs prior cyclical events. forming shown 2A sufficient applied ∼7 V) abruptly switched high-conductance (compliance current, μA), spontaneously relaxed back low-conductance at close-to-zero voltage, suggesting transient behavior. After electroforming, symmetric hysteresis loops detected positive negative sweeps, bipolar dramatically different cell 2B), especially step. Due property 0.043 S/m, S5), large on/off ∼105 steep switch-on slope ∼40 mV/dec. independent compliance settings, remained ∼1.6 V currents, field-driven S6). contrast remain configurations even under high-voltage sweep 20 V), 2C, originated synergistic effort electrodes. It worth noting closely related spacing Control prepared compare capabilities. type varying ranging 1 μm (Figures 2D–2F). second Ag/thermal fixed 2G). greatly depends spacing. Similar also shorter after electroforming 2D. 5-fold device. change operation explained because shortening enhance electric field intensity (electric E = V/day), ions through dielectrics, accelerate “dead” stuck LRS just three cycles permanent pathway reduction (below means higher integration density applications, 2-μm applications. contrast, longer (5 μm), maintained HRS 0 V, difficulty brings separation distance 2F). struggled cycle-to-cycle particularly precarious 3V 6V, randomly distributed unsmooth I-V 2G. 2E). Compared film/Ag, improved mainly originates one-dimensional (1D) MR. evaluate repeatability analyzed (cell 3, 4 5; (100 cycles) five 2H). As 2I 2J, as-fabricated all start HRS, show comparable narrow distributions LRS/HRS well voltages sweeps (forming 6.5–8.0 1.4–1.8 consistency devices. Repeatable 30 cells, each contains S7). consecutive positive/negative sweeping over observed, 2K. 2L (bottom panel) histogram 1. exhibited distribution ∼1.64 (−1.65 quite degree According Gaussian fits histograms, variabilities (defined σ/μ, σ being standard deviation μ mean distribution) 0.095 0.060 (top panel), respectively, other material-based devices.27Milano Scholar,41Fang Huang Improvement HfOx-based RRAM inserting ALD TiN buffer layer.IEEE Electron Device Lett. 39: 819-822Crossref (32) 42Parreira Paterson McVitie MacLaren D.A. Stability, bistability instability ZrO2 devices.J. Phys. D Appl. 49: 095111Crossref 43Fantini Goux Degraeve Wouters D.J. Raghavan Kar Belmonte Govoreanu Jurczak Intrinsic HfO2 RRAM.in: 5th IEEE International Workshop. IEEE, 2013: 30-33Google Temporal term elucidated tests cycles). limited delay time LRS, requires return HRS. pulses yield 2M), reproducibility using larger amplitude (8 ms), turn-on reduced 400 μs S8). similar feature range humidity (RH) (15%–65%), S9). nanostructure, stable weeks RH ∼80% S10), fully degrade fast manner humidifying treatment S9 S11 Video https://www.cell.com/cms/asset/c66993f8-f34f-45c5-8db4-91abf03c5cfe/mmc2.mp4Loading ... Download .mp4 (12.31 MB) Help files S1. Degradation Dynamic properties fading (an state) then investigated applying stimulation monitoring response currents. Under amplitudes (2.5V, 3.5 4.5 duration, 25 showed (with current 10−4 A). input ended, finite time, 3A). (or decay time) increased ms increasing amplitude. uniformity, intervals 200 (larger successively, on-state cur

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ژورنال

عنوان ژورنال: Matter

سال: 2021

ISSN: ['2604-7551']

DOI: https://doi.org/10.1016/j.matt.2021.02.018